SSM3J36TU

更新时间： 2024-11-05 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	186K
描述
Power Management Switches

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中文翻译

获取价格

数据手册

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SSM3J36TU 数据手册

SSM3J36TU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J36TU

○Power Management Switches

•

1.5-V drive

Unit: mm

Low ON-resistance: R = 3.60 Ω (max) (@V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

: R = 2.70 Ω (max) (@V

2.1±0.1

1.7±0.1

: R = 1.60 Ω (max) (@V

: R = 1.31 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-20

±8

DSS

Gate-source voltage

GSS

-330

Drain current

Pulse

-660

(Note1)

(Note2)

500

Drain power dissipation

800

Channel temperature

150

°C

1: Gate

UFM

stg

−55 to 150

Storage temperature range

2: Source

3: Drain

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Note2: Mounted on a ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

P X

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below −1 mA for the

SSM3J36TU). Then, for normal switching operation, V

must be higher than V and V

must be lower than

GS(off)

GS(on)

th,

th.

This relationship can be expressed as: V

< V < V Take this into consideration when using the device.

th GS(on).

GS(off)

2008-06-11

12 3 4 5

中文翻译

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