Datasheet > SSM3J372R

SSM3J372R

更新时间： 2024-09-30 14:57:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	299K
描述
P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F

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中文翻译

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数据手册

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SSM3J372R 数据手册

SSM3J372R

MOSFETs Silicon P-Channel MOS (U-MOS�)

SSM3J372R

1. Applications

•

Power Management Switches

2. Features

(1) AEC-Q101 qualified (Please see the orderable part number list)

(2) 1.8-V gate drive voltage.

(3) Low drain-source on-resistance

RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V)

RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)

3. Packaging and Pin Configuration

1. Gate

2. Source

3. Drain

SOT-23F

4. Orderable part number

Orderable part number

AEC-Q101

Note

SSM3J372R,LF

ꢀ

General Use

SSM3J372R,LXGF

SSM3J372R,LXHF

YES

(Note 1)

Unintended Use

Automotive Use

(Note 1)

Note 1: For more information, please contact our sales or use the inquiry form on our website.

Toshiba Electronic Devices & Storage Corporation

2022-06-29

Rev.4.0

12 3 4 5 6 7...9

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