生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SEPARATE, 2 ELEMENTS |
最小漏源击穿电压: | 25 V | 最大漏极电流 (Abs) (ID): | 3.5 A |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSD2004 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, | |
SSD2005 | SAMSUNG |
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Power Field-Effect Transistor, 2.3A I(D), 25V, 0.25ohm, 2-Element, P-Channel, Silicon, Met | |
SSD2007 | FAIRCHILD |
获取价格 |
Dual N-CHANNEL POWER MOSFET | |
SSD2007A | FAIRCHILD |
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Dual N-CHANNEL POWER MOSFET | |
SSD2007ASTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- | |
SSD2007ATF | FAIRCHILD |
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Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- | |
SSD2008A | ETC |
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TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO | |
SSD2008ATF | FAIRCHILD |
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Transistor, | |
SSD2009 | FAIRCHILD |
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Dual N-CHANNEL POWER MOSFET | |
SSD2009 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal |