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SSD2007ASTF PDF预览

SSD2007ASTF

更新时间: 2024-11-13 13:14:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 182K
描述
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

SSD2007ASTF 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.86Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSD2007ASTF 数据手册

 浏览型号SSD2007ASTF的Datasheet PDF文件第2页浏览型号SSD2007ASTF的Datasheet PDF文件第3页浏览型号SSD2007ASTF的Datasheet PDF文件第4页浏览型号SSD2007ASTF的Datasheet PDF文件第5页 
SSD2007A  
Dual N-CHANNEL POWER MOSFET  
8 SOP  
FEATURES  
1
2
3
4
8
7
6
5
S1  
D1  
D1  
G1  
S2  
D2  
D2  
! Extremely Lower RDS(ON)  
G2  
! Improved Inductive Ruggedness  
! Fast Switching Times  
Top View  
! Rugged Polysilicon Gate Cell Structure  
! Low Input Capacitance  
D1,D2  
D1,D2  
! Extended Safe Operating Area  
! Improved High Temperature Reliability  
! Surface Mounding Package : 8SOP  
G1 ,G2  
S1 ,S2  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
VDSS  
Characteristic  
Drain-to-Source Voltage(1)  
Value  
50  
Units  
V
V
V
A
A
V
VDGR  
Drain-Gate Voltage(RGS=1.0M)(1)  
Gate-to-Source Voltage  
50  
VGS  
ID  
±20  
2.0  
Continuous Drain Current TA=25℃  
Continuous Drain Current TA=100℃  
Drain Current-Pulsed (2)  
ID  
1.6  
IDM  
8.0  
Total Power Dissipation TA=25℃  
TA=70℃  
2.0  
PD  
W
1.3  
Operating and Storage  
TJ , TSTG  
- 55 to +150  
Junction Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/16” from case for 5 seconds  
TL  
300  
Notes ;  
(1) TJ= 25to 150℃  
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature  
Rev. A  

SSD2007ASTF 替代型号

型号 品牌 替代类型 描述 数据表
SSD2007ATF FAIRCHILD

类似代替

Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
SSD2007A FAIRCHILD

功能相似

Dual N-CHANNEL POWER MOSFET

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