Datasheet > SSD20P03-60

SSD20P03-60

更新时间： 2024-11-13 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	407K
描述
P-Ch Enhancement Mode Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSD20P03-60 数据手册

SSD20P03-60

P-Ch Enhancement Mode Power MOSFET

24A, -30V, R_DS(ON)59mΩ

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench

process to provide low R_DS(on)and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable

And battery-powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

TO-252(D-Pack)

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.

Low thermal impedance copper leadframe DPAK saves board space.

Fast switching speed.

High performance trench technology.

G E

PRODUCT SUMMARY

H F

I_D(A)

V_DS(V)

-30

R_DS(on) m(

59@V_GS= -10V

95@V_GS= -4.5V



Drain



Gate

Millimeter

REF.

Min.

Max.

Min.

Max.

6.4

5.20

2.20

0.45

6.8

5.50

2.40

0.58

7.3

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6



Source

0.43

0.15

0.58

2.40

5.40

0.8

3.0

6.2

1.20

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

RATINGS

-30

UNIT

Gate-Source Voltage

V_GS

±20

Continuous Drain Current ^a

Pulsed Drain Current ^b

I_D@T_A=25℃

I_DM

±40

Continuous Source Current (Diode Conduction) ^a

Total Power Dissipation ^a

I_S

-30

P_D@T_A=25℃

T_J, T_STG

°C

Operating Junction and Storage Temperature Range

-55 ~ 175

THERMAL RESISTANCE RATINGS

Maximum Thermal Resistance Junction-Ambient ^a

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

3.0

Notes：

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-May-2010 Rev. A

Page 1 of 4

12 3 4

中文翻译

下载PDF

与SSD20P03-60相关器件

型号	品牌	获取价格	描述	数据表
SSD20P04-60D	SECOS	获取价格	P-Ch Enhancement Mode Power MOSFET
SSD20P06-135D	SECOS	获取价格	P-Ch Enhancement Mode Power MOSFET
SSD20P15_15	SECOS	获取价格	P-Ch Enhancement Mode Power MOSFET
SSD20P15-295D	SECOS	获取价格	P-Ch Enhancement Mode Power MOSFET
SSD2101	SAMSUNG	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal
SSD2102	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met
SSD2104	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Met
SSD2106	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 2.5A I(D) \| SO
SSD2108	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Meta
SSD2123	ACCUTEK	获取价格