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SSD2009

更新时间： 2024-11-12 22:42:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	183K
描述
Dual N-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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SSD2009 数据手册

Dual N-CHANNEL POWER MOSFET

SSD2009A

8 SOIC

FEATURES

S₁

D₁

G₁

S₂

D₂

! Lower R_DS(ON)

G₂

! Improved Inductive Ruggedness

! Fast Switching Times

Top View

! Low Input Capacitance

D₁,D₂

! Extended Safe Operating Area

! Improved High Temperature Reliability

▼

G₁,G₂

▼

Product Summary

R_DS(on)

BV_DSS

50V

Part Number

SSD2009

I_D

S₁,S₂

0.13Ω

3.0A

N -Channel MOSFET

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

Units

V_DSS

Continuous Drain Current T_A=25℃

Continuous Drain Current T_A=70℃

3.0

I_D

2.3

Drain Current-Pulsed

①

I_DM

10.0

±20

2.0

V_GS

Gate-to-Source Voltage

Total Power Dissipation ( T_A=25℃ )

( T_A=70℃ )

P_D

1.3

Operating and Junction Storage

Temperature Range

T_J, T_STG

℃

- 55 to +150

Thermal Resistance

Symbol

Characteristic

Junction-to-Ambient

Typ.

Max.

62.5

Units

R_θJA

℃/W

Rev. A1

12 3 4 5

中文翻译

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与SSD2009相关器件

型号	品牌	获取价格	描述	数据表
SSD2009A	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2011	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal
SSD2011A	FAIRCHILD	获取价格	Dual P-CHANNEL POWER MOSFET
SSD2011ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal
SSD2013	SAMSUNG	获取价格	Power Field-Effect Transistor, 5A I(D), 12V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal
SSD2015	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.2A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Met
SSD2019A	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| P-CHANNEL \| 20V V(BR)DSS \| 3.4A I(D) \| SO
SSD2025	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2025TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SSD2025TF	ROCHESTER	获取价格	3.3A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8