型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSD2009A | FAIRCHILD |
获取价格 |
Dual N-CHANNEL POWER MOSFET | |
SSD2011 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal | |
SSD2011A | FAIRCHILD |
获取价格 |
Dual P-CHANNEL POWER MOSFET | |
SSD2011ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal | |
SSD2013 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 12V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal | |
SSD2015 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.2A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Met | |
SSD2019A | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 3.4A I(D) | SO | |
SSD2025 | FAIRCHILD |
获取价格 |
Dual N-CHANNEL POWER MOSFET | |
SSD2025TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
SSD2025TF | ROCHESTER |
获取价格 |
3.3A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 |