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SSD2009 PDF预览

SSD2009

更新时间: 2024-11-12 22:42:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 183K
描述
Dual N-CHANNEL POWER MOSFET

SSD2009 数据手册

 浏览型号SSD2009的Datasheet PDF文件第2页浏览型号SSD2009的Datasheet PDF文件第3页浏览型号SSD2009的Datasheet PDF文件第4页浏览型号SSD2009的Datasheet PDF文件第5页 
Dual N-CHANNEL POWER MOSFET  
SSD2009A  
8 SOIC  
FEATURES  
1
2
3
4
8
7
6
5
S1  
D1  
D1  
G1  
S2  
D2  
D2  
! Lower RDS(ON)  
G2  
! Improved Inductive Ruggedness  
! Fast Switching Times  
Top View  
! Low Input Capacitance  
D1,D2  
D1,D2  
! Extended Safe Operating Area  
! Improved High Temperature Reliability  
G1 ,G2  
Product Summary  
RDS(on)  
BVDSS  
50V  
Part Number  
SSD2009  
ID  
S1 ,S2  
0.13  
3.0A  
N -Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
50  
Units  
VDSS  
V
Continuous Drain Current TA=25℃  
Continuous Drain Current TA=70℃  
3.0  
ID  
A
2.3  
Drain Current-Pulsed  
IDM  
A
V
10.0  
±20  
2.0  
VGS  
Gate-to-Source Voltage  
Total Power Dissipation ( TA=25)  
( TA=70)  
PD  
W
1.3  
Operating and Junction Storage  
Temperature Range  
TJ , TSTG  
- 55 to +150  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Ambient  
Typ.  
Max.  
62.5  
Units  
RθJA  
/W  
--  
Rev. A1  

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