Datasheet > SSD2019A

SSD2019A

更新时间： 2024-11-12 23:34:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	183K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| P-CHANNEL \| 20V V(BR)DSS \| 3.4A I(D) \| SO

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中文翻译

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数据手册

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SSD2019A 数据手册

Dual P-CHANNEL POWER MOSFET

SSD2019A

8 SOIC

FEATURES

S₁

D₁

G₁

S₂

D₂

! Lower R_DS(ON)

G₂

! Improved Inductive Ruggedness

! Fast Switching Times

Top View

D₁D₂

! Low Input Capacitance

! Extended Safe Operating Area

! Improved High Temperature Reliability

▲

◀

G₁, G₂

Product Summary

Part Number

SSD2019A

BV_DSS

-20V

R_DS(on)

I_D

0.11Ω

-3.4A

S₁, S₂

P-Channel MOSFET

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

-20

Units

V_DSS

Continuous Drain Current T_A=25℃

Continuous Drain Current T_A=70℃

-3.4

-2.7

-8.0

±12

2.0

I_D

Drain Current-Pulsed

①

I_DM

V_GS

Gate-to-Source Voltage

Total Power Dissipation ( T_A=25℃ )

( T_A=70℃ )

P_D

1.3

Operating and Junction Storage

Temperature Range

T_J, T_STG

℃

- 55 to +150

Thermal Resistance

Symbol

Characteristic

Junction-to-Ambient

Typ.

Max.

62.5

Units

R_θJA

℃/W

Rev. A1

12 3 4 5

中文翻译

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