生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.82 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 8 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SSD2007ASTF | FAIRCHILD |
功能相似 |
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- | |
SSD2007ATF | FAIRCHILD |
功能相似 |
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSD2007ASTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- | |
SSD2007ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal- | |
SSD2008A | ETC |
获取价格 |
TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO | |
SSD2008ATF | FAIRCHILD |
获取价格 |
Transistor, | |
SSD2009 | FAIRCHILD |
获取价格 |
Dual N-CHANNEL POWER MOSFET | |
SSD2009 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal | |
SSD2009A | FAIRCHILD |
获取价格 |
Dual N-CHANNEL POWER MOSFET | |
SSD2011 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal | |
SSD2011A | FAIRCHILD |
获取价格 |
Dual P-CHANNEL POWER MOSFET | |
SSD2011ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal |