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SSD2007A PDF预览

SSD2007A

更新时间: 2024-11-12 22:35:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 182K
描述
Dual N-CHANNEL POWER MOSFET

SSD2007A 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSD2007A 数据手册

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SSD2007A  
Dual N-CHANNEL POWER MOSFET  
8 SOP  
FEATURES  
1
2
3
4
8
7
6
5
S1  
D1  
D1  
G1  
S2  
D2  
D2  
! Extremely Lower RDS(ON)  
G2  
! Improved Inductive Ruggedness  
! Fast Switching Times  
Top View  
! Rugged Polysilicon Gate Cell Structure  
! Low Input Capacitance  
D1,D2  
D1,D2  
! Extended Safe Operating Area  
! Improved High Temperature Reliability  
! Surface Mounding Package : 8SOP  
G1 ,G2  
S1 ,S2  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
VDSS  
Characteristic  
Drain-to-Source Voltage(1)  
Value  
50  
Units  
V
V
V
A
A
V
VDGR  
Drain-Gate Voltage(RGS=1.0M)(1)  
Gate-to-Source Voltage  
50  
VGS  
ID  
±20  
2.0  
Continuous Drain Current TA=25℃  
Continuous Drain Current TA=100℃  
Drain Current-Pulsed (2)  
ID  
1.6  
IDM  
8.0  
Total Power Dissipation TA=25℃  
TA=70℃  
2.0  
PD  
W
1.3  
Operating and Storage  
TJ , TSTG  
- 55 to +150  
Junction Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/16” from case for 5 seconds  
TL  
300  
Notes ;  
(1) TJ= 25to 150℃  
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature  
Rev. A  

SSD2007A 替代型号

型号 品牌 替代类型 描述 数据表
SSD2007ASTF FAIRCHILD

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Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
SSD2007ATF FAIRCHILD

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Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-

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