Datasheet > SSD2008A

SSD2008A

更新时间： 2024-11-12 23:34:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	301K
描述
TRANSISTOR \| MOSFET \| PAIR \| COMPLEMENTARY \| 30V V(BR)DSS \| 3.5A I(D) \| SO

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中文翻译

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数据手册

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SSD2008A 数据手册

Dual P-CHANNEL POWER MOSFET

SSD2008A

8 SOIC

FEATURES

S₁

D₁

G₁

S₂

D₂

! Lower R_DS(ON)

G₂

! Improved Inductive Ruggedness

! Fast Switching Times

Top View

D₁D₁

D₂D₂

! Low Input Capacitance

! Extended Safe Operating Area

! Improved High Temperature Reliability

◀

▲

G₁

◀

G₂

▲

Product Summary

SSD2008

N-Channel

P-Channel

BV_DSS

30V

R_DS(on)

0.05Ω

I_D

3.5A

-3.5A

S₁

S₂

-30V

0.10Ω

N & P-Channel MOSFET

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

N-Channel

P-Channel

Units

V_DSS

-30

-3.5

Continuous Drain Current T_A=25℃

Continuous Drain Current T_A=70℃

3.5

I_D

2.8

-2.8

Drain Current-Pulsed

①

I_DM

14.0

±20

-14.0

±20

V_GS

Gate-to-Source Voltage

Total Power Dissipation ( T_A=25℃ )

( T_A=70℃ )

2.0

P_D

1.3

Operating and Junction Storage

Temperature Range

T_J, T_STG

℃

- 55 to +150

Thermal Resistance

Symbol

Characteristic

Junction-to-Ambient

Typ.

Max.

Units

R_θJA

℃/W

62.5

Rev. A1

12 3 4 5 6 7 8

中文翻译

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与SSD2008A相关器件

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SSD2009A	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2011	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal
SSD2011A	FAIRCHILD	获取价格	Dual P-CHANNEL POWER MOSFET
SSD2011ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal
SSD2013	SAMSUNG	获取价格	Power Field-Effect Transistor, 5A I(D), 12V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal
SSD2015	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.2A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Met
SSD2019A	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| P-CHANNEL \| 20V V(BR)DSS \| 3.4A I(D) \| SO