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SSD2007 PDF预览

SSD2007

更新时间: 2024-11-12 22:42:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 182K
描述
Dual N-CHANNEL POWER MOSFET

SSD2007 数据手册

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SSD2007A  
Dual N-CHANNEL POWER MOSFET  
8 SOP  
FEATURES  
1
2
3
4
8
7
6
5
S1  
D1  
D1  
G1  
S2  
D2  
D2  
! Extremely Lower RDS(ON)  
G2  
! Improved Inductive Ruggedness  
! Fast Switching Times  
Top View  
! Rugged Polysilicon Gate Cell Structure  
! Low Input Capacitance  
D1,D2  
D1,D2  
! Extended Safe Operating Area  
! Improved High Temperature Reliability  
! Surface Mounding Package : 8SOP  
G1 ,G2  
S1 ,S2  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
VDSS  
Characteristic  
Drain-to-Source Voltage(1)  
Value  
50  
Units  
V
V
V
A
A
V
VDGR  
Drain-Gate Voltage(RGS=1.0M)(1)  
Gate-to-Source Voltage  
50  
VGS  
ID  
±20  
2.0  
Continuous Drain Current TA=25℃  
Continuous Drain Current TA=100℃  
Drain Current-Pulsed (2)  
ID  
1.6  
IDM  
8.0  
Total Power Dissipation TA=25℃  
TA=70℃  
2.0  
PD  
W
1.3  
Operating and Storage  
TJ , TSTG  
- 55 to +150  
Junction Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/16” from case for 5 seconds  
TL  
300  
Notes ;  
(1) TJ= 25to 150℃  
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature  
Rev. A  

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