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SSD2007

更新时间： 2024-11-12 22:42:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	182K
描述
Dual N-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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SSD2007 数据手册

SSD2007A

Dual N-CHANNEL POWER MOSFET

8 SOP

FEATURES

S₁

D₁

G₁

S₂

D₂

! Extremely Lower R_DS(ON)

G₂

! Improved Inductive Ruggedness

! Fast Switching Times

Top View

! Rugged Polysilicon Gate Cell Structure

! Low Input Capacitance

D₁,D₂

! Extended Safe Operating Area

! Improved High Temperature Reliability

! Surface Mounding Package : 8SOP

▼

G₁,G₂

▼

S₁,S₂

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

V_DSS

Characteristic

Drain-to-Source Voltage(1)

Value

Units

V_DGR

Drain-Gate Voltage(R_GS=1.0MΩ)(1)

Gate-to-Source Voltage

V_GS

I_D

±20

2.0

Continuous Drain Current T_A=25℃

Continuous Drain Current T_A=100℃

Drain Current-Pulsed (2)

I_D

1.6

I_DM

8.0

Total Power Dissipation T_A=25℃

T_A=70℃

2.0

P_D

1.3

Operating and Storage

T_J, T_STG

- 55 to +150

Junction Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/16” from case for 5 seconds

℃

T_L

300

Notes ;

(1) T_J= 25℃ to 150℃

(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature

Rev. A

12 3 4 5

中文翻译

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与SSD2007相关器件

型号	品牌	获取价格	描述	数据表
SSD2007A	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2007ASTF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
SSD2007ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
SSD2008A	ETC	获取价格	TRANSISTOR \| MOSFET \| PAIR \| COMPLEMENTARY \| 30V V(BR)DSS \| 3.5A I(D) \| SO
SSD2008ATF	FAIRCHILD	获取价格	Transistor,
SSD2009	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2009	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal
SSD2009A	FAIRCHILD	获取价格	Dual N-CHANNEL POWER MOSFET
SSD2011	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 2-Element, P-Channel, Silicon, Metal
SSD2011A	FAIRCHILD	获取价格	Dual P-CHANNEL POWER MOSFET