Datasheet > SMG2305PE

SMG2305PE

更新时间： 2024-11-09 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	617K
描述
P-Channel Enhancement MOSFET

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SMG2305PE 数据手册

SMG2305PE

-4.5 A, -20 V, R_DS(ON)43 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation. Typical

applications are DC-DC converters and power management

in portable and battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.

Millimeter

Min. Max.

2.70

2.25

1.30

1.00

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.



Low thermal impedance copper leadframe SC-59

saves board space.

3.10

3.00

1.70

1.40

0.10

0.45

0.20

0.55



Fast switching speed.

High performance trench technology.

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ESD

Protection

Diode

2KV

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

±8

T_A=25°C

T_A=70°C

-4.5

Continuous Drain Current ¹

Pulsed Drain Current ²

Power Dissipation ¹

I_D

I_DM

-3.6

-10

T_A=25°C

T_A=70°C

1.25

0.8

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

Thermal Resistance Data

t ≦ 5 sec

R_θJA

100

150

Maximum Junction to Ambient ¹

°C/W

Steady-State

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Jan-2011 Rev. B

Page 1 of 4

12 3 4

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