是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
Reach Compliance Code: | compliant | 风险等级: | 5.67 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 4.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.3 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMG2306 | SECOS |
获取价格 |
N-Channel Enhancement Mode Power Mos.FET |
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SMG2306A | SECOS |
获取价格 |
N-Channel Enhancement Mode Power Mos.FET |
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SMG2306N | SECOS |
获取价格 |
N-Channel Enhancement Mode Mos.FET |
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SMG2306NE | SECOS |
获取价格 |
N-Channel Enhancement Mode Mos.FET |
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SMG2307 | SECOS |
获取价格 |
P-Channel Enhancement Mode Power Mos.FET |
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SMG2307PE | SECOS |
获取价格 |
P-Channel Enhancement MOSFET |
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SMG2307PE_15 | SECOS |
获取价格 |
P-Channel Elektronische Bauelemente Enhancement MOSFET |
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SMG2309 | SECOS |
获取价格 |
P-Channel Enhancement Mode Power Mos.FET |
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SMG2310 | SECOS |
获取价格 |
N-Channel Enhancement Mode Power Mos.FET |
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SMG2310A | SECOS |
获取价格 |
N-Ch Enhancement Mode Power MOSFET |
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