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SMG2305PE PDF预览

SMG2305PE

更新时间: 2024-02-07 05:23:22
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 617K
描述
P-Channel Enhancement MOSFET

SMG2305PE 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.67
配置:Single最大漏极电流 (Abs) (ID):4.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SMG2305PE 数据手册

 浏览型号SMG2305PE的Datasheet PDF文件第2页浏览型号SMG2305PE的Datasheet PDF文件第3页浏览型号SMG2305PE的Datasheet PDF文件第4页 
SMG2305PE  
-4.5 A, -20 V, RDS(ON) 43 m  
P-Channel Enhancement MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SC-59  
These miniature surface mount MOSFETs utilize a high  
cell density trench process to provide low RDS(on) and to  
ensure minimal power loss and heat dissipation. Typical  
applications are DC-DC converters and power management  
in portable and battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless telephones.  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
D
FEATURES  
H
J
G
Low RDS(on) provides higher efficiency and extends  
battery life.  
Millimeter  
Min. Max.  
2.70  
2.25  
1.30  
1.00  
Millimeter  
Min. Max.  
0.10 REF.  
0.40 REF.  
REF.  
REF.  
Low thermal impedance copper leadframe SC-59  
saves board space.  
A
B
C
D
3.10  
3.00  
1.70  
1.40  
G
H
J
0.10  
0.45  
0.20  
0.55  
Fast switching speed.  
High performance trench technology.  
K
E
F
1.70  
0.35  
2.30  
0.50  
L
0.85  
1.15  
PACKAGE INFORMATION  
Package  
MPQ  
3K  
LeaderSize  
SC-59  
7’ inch  
ESD  
Protection  
Diode  
2KV  
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter Symbol  
Rating  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-20  
±8  
V
V
TA=25°C  
TA=70°C  
-4.5  
Continuous Drain Current 1  
Pulsed Drain Current 2  
Power Dissipation 1  
ID  
IDM  
A
A
-3.6  
-10  
TA=25°C  
TA=70°C  
1.25  
0.8  
PD  
W
°C  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
-55 ~ 150  
Thermal Resistance Data  
t 5 sec  
RθJA  
100  
150  
Maximum Junction to Ambient 1  
°C/W  
Steady-State  
Notes:  
1. Surface Mounted on 1” x 1” FR4 Board.  
2. Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-Jan-2011 Rev. B  
Page 1 of 4  

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