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SMG2314 PDF预览

SMG2314

更新时间: 2024-10-01 09:19:07
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 546K
描述
N-Channel Enhancement Mode Power Mos.FET

SMG2314 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.58Base Number Matches:1

SMG2314 数据手册

 浏览型号SMG2314的Datasheet PDF文件第2页浏览型号SMG2314的Datasheet PDF文件第3页浏览型号SMG2314的Datasheet PDF文件第4页 
SMG2314  
Ω
3.5A, 20V,RDS(ON)75m  
Elektronische Bauelemente  
N-Channel Enhancement Mode Power Mos.FET  
RoHS Compliant Product  
Description  
The SMG2314 utilized advanced processing techniques  
to achieve the lowest possible on-resistance, extemely  
efficient and cost-effectiveness device. The SMG2314  
is universally used for all commercial-industrial  
applications.  
A
SC-59  
Min  
L
Dim  
A
Max  
3.10  
1.60  
1.30  
0.50  
2.10  
0.10  
0.26  
0.60  
1.15  
2.80  
2.70  
1.40  
1.00  
0.35  
1.70  
0.00  
0.10  
0.20  
0.85  
2.40  
3
S
B
Top View  
B
2
1
C
Features  
D
D
G
H
Low On-Resistance  
G
*
* Capable Of 2.5V Gate Drive  
J
C
J
K
K
H
L
Drain  
Marking : 2314  
S
Gate  
All Dimension in mm  
Source  
D
G
S
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
Unit  
V
20  
±12  
3.5  
Gate-Source Voltage  
VGS  
V
A
3
ID@TA=25oC  
Continuous Drain Current, VGS@4.5V  
3
oC  
Continuous Drain Current, VGS@4.5V  
ID@TA=70  
2.8  
10  
A
A
Pulsed Drain Current1,2  
IDM  
Total Power Dissipation  
PD@TA=25o  
C
1.38  
0.01  
W
W/ oC  
oC  
Linear Derating Factor  
-55~+150  
Tj, Tstg  
Operating Junction and Storage Temperature Range  
Thermal Data  
Parameter  
Symbol  
Ratings  
Unit  
o
Thermal Resistance Junction-ambient 3  
C /W  
Rthj-a  
Max.  
90  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 4  

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