Datasheet > SMG2327P

SMG2327P

更新时间： 2024-10-02 01:17:43

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	495K
描述
P-Channel Enhancement MOSFET

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SMG2327P 数据手册

SMG2327P

-3.6 A, -20 V, R_DS(ON)52 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

The miniature surface mount MOSFETs utilize high

cell density process.Low R_DS(on)assures minimal power

loss and conserves energy, making this device ideal for

use in power management circuitry.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Miniature SC-59 surface mount package saves

board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

APPLICATION

DC-DC converters, power management in

portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and

cordless telephones.





PACKAGE INFORMATION



Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-3.6

Continuous Drain Current ¹

I_D

-1.8

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

I_DM

I_S

-10

±0.46

1.25

T_A=25°C

T_A=70°C

Power Dissipation ¹

P_D

0.8

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦5 sec

R_θJA

Steady-State

100

150

Maximum Junction to Ambient ¹

Notes

°C/W

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-Aug-2012 Rev. B

Page 1 of 4

12 3 4

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