Datasheet > SMG2328S

SMG2328S

更新时间： 2024-10-02 01:17:43

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SECOS		/
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描述
N-Channel Enhancement Mode MOSFET

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SMG2328S 数据手册

SMG2328S

1.2A , 100V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

The SMG2328S utilized advanced processing

techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device. The

SMG5406 is universally used for all commercial-industrial

applications.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

2328S

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

100

V_GS

±20

T_A=25°C

T_A=70°C

1.2

Continuous Drain Current ¹, V_GS@10V

I_D

Pulsed Drain Current ²

Power Dissipation ³

I_DM

P _D

°C

T_A=25°C

Operating Junction and Storage Temperature Range

T_j, T_stg

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ¹

Maximum Junction to Case ¹

R_θJA

R_θJC

125

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Sep-2012 Rev. A

Page 1 of 4

12 3 4

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