Datasheet > SMG2359P

SMG2359P

更新时间： 2024-01-20 16:58:04

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	326K
描述
P-Channel Enhancement MOSFET

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SMG2359P 数据手册

SMG2359P

-1.6 A, -60 V, R_DS(ON)0.381 

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SC-59

DESCRIPTION

The miniature surface mount MOSFETs utilize a high cell density trench process

To provide low R_DS(on)and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in

portable and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.

Low thermal impedance copper leadframe SC-59 saves board

space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

PRODUCT SUMMARY

0.10

0.45

0.85

0.20

0.55

1.15

1.70

0.35

2.30

0.50

I_D(A)

-1.6

-1.3

V_DS(V)

R_DS(on) (

0.381@V_GS= -10V

0.561@V_GS= -4.5V



Drain

-60



Gate



Source

ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T_A= 25°C unless otherwise specified)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

RATING

-60

UNIT

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

1.7

Continuous Drain Current ^A

I_D

1.4

Pulsed Drain Current ^B

Continuous Source Current (Diode Conduction) ^A

I_DM

I_S

±15

-1.7

T_A=25°C

T_A=70°C

1.3

Power Dissipation ^A

P_D

0.8

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

°C

THERMAL RESISTANCE DATA

t≦5 sec

R_θJA

100

166

Maximum Junction to Ambient ^A

°C/W

Steady-State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

22-Jun-2010 Rev. A

Page 1 of 4

12 3 4

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