Datasheet > SMG2370N_15

SMG2370N_15

更新时间： 2024-01-21 14:10:50

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	142K
描述
N-Channel Enhancement Mode Mos.FET

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SMG2370N_15 数据手册

SMG2370N

1.8 A, 100 V, R_DS(ON)280 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High

Cell Density trench process to provide Low R_DS(on)and to

ensure minimal power loss and heat dissipation. Typical

applications are DC-DC converters and power management

in portable and battery-powered products such as computers,

printer , PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe SC-59

saves board Space.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40



Fast switching speed.

High performance trench technology.

2.70

2.25

1.30

1.00

0.10

0.45

0.85

0.20

0.55

1.15

1.70

0.35

2.30

0.50

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_DS

V_GS

I_D

I_DM

I_S

100

±20

1.8

±10

1.1

I_D@ T_A=25°C

P_D@ T_A=25°C

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

P_D

Tj, Tstg

1.3

-55 ~ 150

°C

Operating Junction and Storage Temperature Range

Thermal Resistance Ratings

Symbol

Parameter

Typ

Max

Unit

t ≦ 10 sec

130

110

150

Maximum Junction to Ambient ¹

R_JA

°C / W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec-2010 Rev. A

Page 1 of 2

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