Datasheet > SMG2391P

SMG2391P

更新时间： 2024-02-18 23:06:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	1826K
描述
-0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET

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SMG2391P 数据手册

SMG2391P

-0.9A , -150V , R_DS(ON)1.2 Ω

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

FEATURES

ꢀ

Low R_DS(on)trench technology

Low thermal impedance

Fast switching speed

Top View

C B

APPLICATIONS

ꢀ

PoE Power Sourcing Equipment

PoE Powered Devices

Telecom DC/DC converters

White LED boost converters

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.45

0.20

0.55

1.15

PACKAGE INFORMATION

2.30

^1.70TOP VIE^LW^0.85

0.35

0.50

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-150

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

-0.9

Continuous Drain Current ¹

Pulsed Drain Current ²

Power Dissipation¹

I_D

-0.8

I_DM

P_D

T_A=25°C

T_A=70°C

1.3

0.8

Continuous Source Current (Diode Conduction) ¹

I_S

1.5

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

t<= 10sec

100

166

Maximum Junction to Ambient ¹

R_θJA

°C / W

Steady State

Notes:

1. Surface mounted on 1”x1” FR4 board.

2. Pulse width limited by Max. junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Oct-2011 Rev. A

Page 1 of 4

12 3 4

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