Datasheet > SMG3314

SMG3314

更新时间： 2024-10-31 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	499K
描述
P-Channel Enhancement Mode Power Mos.FET

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数据手册

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SMG3314 数据手册

SMG3314

-1.9A, -30V,RDS(ON) 240m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG3314 provide the designer with the best

combination of fast switching, low on-resistance

Top View

and cost-effectiveness.

Features

* Ultrahigh-Speed Switching

* 4V Drive

Drain

Gate

* Low On-Resistance

Source

All Dimension in mm

Marking : 3314

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-30

Gate-Source Voltage

VGS

±20

Continuous Drain Current ³

Continuous Drain Current³

Pulsed Drain Current^1,2

ID@TA=25 ^o

-1.9

-1.5

ID@TA=70

IDM

-10

1.38

PD@TA=25 ^o

Total Power Dissipation

0.01

W/^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

C /W

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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