Datasheet > SMG3400

SMG3400

更新时间： 2024-10-31 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	417K
描述
N-Channel Enhancement Mode Power Mos.FET

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中文翻译

获取价格

技术参数
数据手册

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SMG3400 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.59	Base Number Matches：	1

SMG3400 数据手册

SMG3400

5.8A, 30V,RDS(ON) 28mΩ

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Description

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG3400 uses advanced trench technology to provide

Top View

excellent on-resistance extremely efficient and

cost-effectiveness device.

The SMG3400 is universally used for all

commercial-industrial applications.

Features

Drain

* Lower Gate Charge

Gate

* Small Package Outline

All Dimension in mm

Source

RoHS Compliant

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±12

5.8

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

I_D@TA=25к

I_D@TA=70к

I_DM

4.9

P_D@TA=25к

1.38

0.01

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Value

Unit

к/W

Thermal Resistance Junction-ambient³Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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