Datasheet > SMG3407

SMG3407

更新时间： 2024-11-01 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	513K
描述
P-Channel Enhancement Mode Power Mos.FET

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中文翻译

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技术参数
数据手册

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SMG3407 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SMG3407 数据手册

SMG3407

-4.1A, -30V,RDS(ON) 52m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG3407 uses advanced trench technology to

provide excellent on-resistance with low gate change.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

The device is suitable for use as a load switch or in

PWM applications.

Features

* Lower Gate Charge

* Small Package Outline

Drain

RoHS Compliant

Gate

Source

All Dimension in mm

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-30

Unit

Gate-Source Voltage

V_GS

±20

Continuous Drain Current³

Pulsed Drain Current¹

I_D@TA=25к

I_D@TA=70к

I_DM

-4.1

-3.5

-20

Power Dissipation

P_D@TA=25к

1.38

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.01

W/к

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

к/W

Thermal Resistance Junction-ambient³Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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