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SMG3402 PDF预览

SMG3402

更新时间: 2024-11-01 01:17:59
品牌 Logo 应用领域
SECOS 开关脉冲光电二极管晶体管
页数 文件大小 规格书
4页 689K
描述
N-Ch Enhancement Mode Power MOSFET

SMG3402 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.71配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):4.6 A
最大漏极电流 (ID):4.6 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.38 W最大脉冲漏极电流 (IDM):16 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SMG3402 数据手册

 浏览型号SMG3402的Datasheet PDF文件第2页浏览型号SMG3402的Datasheet PDF文件第3页浏览型号SMG3402的Datasheet PDF文件第4页 
SMG3402  
N-Ch Enhancement Mode Power MOSFET  
4.6 A, 30 V, RDS(ON), 30 m  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTIONS & FEATURES  
The SMG3402 uses advanced trench technology to provide excellent on-resistance.  
The device is suitable for use as a load switch or in PWM applications.  
Lower On-resistance  
SC-59  
C B  
A
L
3
3
PACKAGE INFORMATION  
Top View  
1
Weight: 0.07800g  
1
2
2
K
F
E
D
Drain  
3
H
J
G
MARKING CODE  
Millimeter  
Min.  
2.70  
2.25  
1.30  
1.00  
Millimeter  
Min. Max.  
0.10 REF.  
0.40 REF.  
0.10  
0.45  
0.85  
REF.  
REF.  
Max.  
3.10  
3.00  
1.70  
1.40  
A
B
C
D
G
H
J
1
Gate  
0.20  
0.55  
1.15  
K
3402  
E
F
1.70  
0.35  
2.30  
0.50  
L
2
Source  
1
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Ratings  
Unit  
Drain-Source Voltage  
VDS  
VGS  
30  
±20  
V
V
Gate-Source Voltage  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1,2  
Total Power Dissipation  
ID @TA=25  
ID @TA=70℃  
IDM  
4.6  
A
3.7  
A
16  
A
PD @TA=25℃  
TJ, TSTG  
1.38  
W
Operating Junction and Storage Temperature Range  
Linear Derating Factor  
-55 ~ +150  
0.01  
W/℃  
THERMAL DATA  
Parameter  
Thermal Resistance Junction-ambient3  
Symbol  
Value  
90  
Unit  
/W  
Max  
RθJ-AMB  
01-December-2008 Rev. A  
Page 1 of 4  

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