是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.71 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 4.6 A |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.38 W | 最大脉冲漏极电流 (IDM): | 16 A |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMG3402_15 | SECOS |
获取价格 |
N-Ch Enhancement Mode Power MOSFET | |
SMG3403 | SECOS |
获取价格 |
P-Channel Enhancement Mode Power Mos.FET | |
SMG3403A | SECOS |
获取价格 |
P-Channel Enhancement Mode Power Mos.FET | |
SMG3407 | SECOS |
获取价格 |
P-Channel Enhancement Mode Power Mos.FET | |
SMG350VB121M20X35LL | CHEMI-CON |
获取价格 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350V, 120uF, THROUGH HOLE MOUNT, R | |
SMG350VB22RM12X20LL | CHEMI-CON |
获取价格 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350V, 22uF, THROUGH HOLE MOUNT, RA | |
SMG350VB2R2M8X11LL | CHEMI-CON |
获取价格 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350V, 2.2uF, THROUGH HOLE MOUNT, R | |
SMG350VB47RM20X20LL | CHEMI-CON |
获取价格 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350V, 47uF, THROUGH HOLE MOUNT, RA | |
SMG351AN | SECOS |
获取价格 |
N-Channel Enhancement Mode Power Mos.FET | |
SMG35VB101M6X11LL | CHEMI-CON |
获取价格 |
Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 35V, 20% +Tol, 20% -Tol, 100uF |