Datasheet > SMG2392N

SMG2392N

更新时间： 2024-02-18 11:02:16

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N-Channel Enhancement Mode MOSFET

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SMG2392N 数据手册

SMG2392N

0.6A, 150V, R_DS(ON)2.6Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High

Cell Density trench process to provide Low R_DS(on)and to

ensure minimal power loss and heat dissipation. Typical

applications are

Top View

C B

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life.

ꢀ

Low thermal impedance copper lead frame SC-59

saves board space.

ꢀ

Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

0.10

0.20

0.45

0.85

0.55

1.15

Application

1.70

0.35

2.30

0.50

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)

Parameter

Symbol

V_DS

Ratings

150

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

0.6

Continuous Drain Current ¹

I_D

0.4

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

1.7

T_A=25°C

1.3

°C

Power Dissipation ¹

P_D

T_A=70°C

0.8

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

Thermal Resistance Ratings

t ≦10sec

Steady State

100

Maximum Junction to Ambient ¹

Notes:

R_θ

°C / W

166

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-May-2013 Rev. A

Page 1 of 4

12 3 4

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