Datasheet > SMG2402

SMG2402

更新时间： 2024-02-18 02:52:32

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SECOS		/
页数	文件大小	规格书
5页	468K
描述
N-Channel Enhancement Mode Power Mos.FET

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中文翻译

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数据手册

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SMG2402 数据手册

SMG2402

3.2A, 20V,RDS(ON) 250m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Top View

The SMG2402 provides the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Features

* Fast Switching

* Ultra Low On-Resistance

Drain

Gate

Source

Applications

All Dimension in mm

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 2402

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±12

3.2

2.6

7.4

Gate-Source Voltage

VGS

ID@TA=25^oC

Continuous Drain Current, VGS@4.5V

^oC

Continuous Drain Current, VGS@4.5V

I^D@TA=70

Pulsed Drain Current^1,2

I^DM

Total Power Dissipation

PD@TA=25^o

1.38

0.01

W/ ^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

C /W

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 5

12 3 4 5

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