Datasheet > SMG2398NE

SMG2398NE

更新时间： 2024-02-08 17:20:56

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	140K
描述
N-Channel Enhancement Mode Mos.FET

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中文翻译

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SMG2398NE 数据手册

SMG2398NE

2.2 A, 60 V, R_DS(ON)194 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High Cell Density

trench process to provide Low R_DS(on)and to ensure minimal power loss

and heat dissipation. Typical applications are DC-DC converters and

power management in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.



Low gate charge

Fast switching

Miniature SC-59 surface mount package saves board space.

PRODUCT SUMMARY

SMG2398NE

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

V_DS(V)

R_DS(on) (m

194@V_GS= 10V

273@V_GS= 4.5V

I_D(A)

2.2

1.8

0.10

0.45

0.20

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

Package

MPQ

LeaderSize

ESD

Protection Diode

2KV

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

2.2

1.7

±15

1.7

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_DM

I_S

P_D@ T_A=25°C

P_D@ T_A=70°C

1.3

0.8

-55 ~ 150

°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

t ≦ 5 sec

R_JA

100

166

Maximum Junction to Ambient ¹

°C / W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Nov-2010 Rev. A

Page 1 of 2

中文翻译

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