Datasheet > SMG2371P

SMG2371P

更新时间： 2024-02-25 00:30:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	815K
描述
P-Channel Enhancement MOSFET

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SMG2371P 数据手册

SMG2371P

-1A, -100V, R_DS(ON)1.2 

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SC-59



Low R_DS(on)trench technology.

Low thermal impedance.

Fast switching speed.

Top View

C B

APPLICATIONS



PoE Power Sourcing Equipment

PoE Powered Devices

Telecom DC/DC converters.

White LED boost converters.

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

0.55

1.15

0.45

0.85

1.70

0.35

2.30

0.50

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A=25°C

T_A=70°C

-1

Continuous Drain Current ¹

I_D

-0.8

Pulsed Drain Current ²

I_DM

I_S

-10

Continuous Source Current (Diode Conduction) ¹

-1.6

T_A=25°C

T_A=70°C

1.3

Power Dissipation ¹

P_D

0.8

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Data

t≦10 sec

R_θJA

Steady-State

100

166

Maximum Junction to Ambient ¹

Notes:

°C/W

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Mar-2011 Rev. A

Page 1 of 4

12 3 4

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