Datasheet > SMG2390N

SMG2390N

更新时间： 2024-01-18 01:48:33

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	137K
描述
N-Channel Enhancement Mode Mos.FET

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SMG2390N 数据手册

SMG2390N

N-Channel Enhancement Mode Mos.FET

1.1 A, 150 V, R_DS(ON)0.700 

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High Cell Density

trench process to provide Low R_DS(on)and to ensure minimal power

loss and heat dissipation. Typical applications are DC-DC converters

and power management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular and cordless

telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SC-59 saves

board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

PRODUCT SUMMARY

0.10

0.45

0.20

0.55

1.70

0.35

2.30

0.50

0.85

1.15

I_D(A)

1.1

0.8

V_DS(V)

R_DS(on) (

0.700@V_GS= 10V

1.200@V_GS= 5.5V

150

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

150

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ^a

Pulsed Drain Current ^b

V_DS

V_GS

I_D

I_DM

I_S

±20

1.1

±10

1.1

Continuous Source Current (Diode Conduction) ^a

Power Dissipation ^a

P_D

Tj, Tstg

1.30

-55 ~ 150

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Typ

Max

Unit

t ≦ 10 sec

R_JA

130

110

150

Maximum Junction to Ambient ^a

°C / W

Steady State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

20-Aug-2010 Rev. A

Page 1 of 2

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