Datasheet > SMG2361P_15

SMG2361P_15

更新时间： 2024-01-04 16:50:34

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	450K
描述
P-Channel Enhancement MOSFET

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数据手册

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SMG2361P_15 数据手册

SMG2361P

-3.4A , -60V , R_DS(ON)210 mΩ

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

Top View

C B

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life.

ꢀ

Low thermal impedance copper leadframe SC-59

saves board space.

Millimeter

Min. Max.

Millimeter

ꢀ

Fast switching speed.

High performance trench technology.

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.45

0.85

0.20

0.55

1.15

1.70

0.35

2.30

0.50

APPLICATION

DC-DC converters and power management

in portable and battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A=25°C

T_A=70°C

-3.4

Continuous Drain Current ¹

I_D

-2.6

Pulsed Drain Current ²

I_DM

I_S

-20

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

-1.6

1.3

Power Dissipation ¹

P_D

°C

0.8

T_J, T_STG

-55~150

Thermal Resistance Data

t ≦ 10 sec

100

166

Maximum Junction to Ambient ¹

R_θJA

°C / W

Steady-State

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

22-Aug-2013 Rev. A

Page 1 of 4

12 3 4

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