SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
FEATURES
1
1
2
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
2
K
F
E
D
H
J
G
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
APPLICATION
0.10
0.20
K
0.45
0.55
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±12
V
V
TA=25°C
TA=70°C
5.3
Continuous Drain Current 1
ID
A
4.1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
30
A
A
1.9
TA=25°C
TA=70°C
1.3
Power Dissipation 1
PD
W
0.8
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Rating
t≦10 sec
RθJA
100
166
Maximum Junction to Ambient 1
°C/W
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
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