Datasheet > SMG2342NE_15

SMG2342NE_15

更新时间： 2024-01-16 23:37:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	122K
描述
N-Channel Enhancement MOSFET

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SMG2342NE_15 数据手册

SMG2342NE

5.2 A, 40 V, R_DS(ON)86 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SC-59

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low R_DS(on)and

to ensure minimal power loss and heat dissipation. Typical

applications are DC-DC converters and power management

in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless

telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe SC-59

saves board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.45

0.85

0.20

0.55

1.15

PACKAGE INFORMATION

1.70

0.35

2.30

0.50

Package

MPQ

LeaderSize

SC-59

7’ inch

ESD

Protection

Diode

2KV

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

5.2

4.1

V_GS

T_A=25°C

T_A=70°C

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

I_DM

I_S

1.6

1.3

0.8

T_A=25°C

Power Dissipation ¹

T_A=70°C

Operating Junction and Storage Temperature Range

P_D

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Data

t≦5 sec

100

166

Maximum Junction to Ambient ¹

R_θJA

°C/W

Steady-State

Notes

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec-2010 Rev. A

Page 1 of 2

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