Datasheet > SMG2358N

SMG2358N

更新时间： 2024-02-26 17:42:38

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	114K
描述
N-Channel Enhancement Mode Mos.FET

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SMG2358N 数据手册

SMG2358N

2.8 A, 60 V, R_DS(ON)92 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High Cell Density

trench process to provide Low R_DS(on)and to ensure minimal power

loss and heat dissipation. Typical applications are DC-DC converters

and power management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular and cordless

telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SC-59 saves

board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

PACKAGE INFORMATION

0.10

0.45

0.85

0.20

0.55

1.15

Package

MPQ

LeaderSize

1.70

0.35

2.30

0.50

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

2.8

1.8

±15

1.7

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_DM

I_S

P_D@ T_A=25°C

P_D@ T_A=70°C

1.3

0.8

-55 ~ 150

°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

t ≦ 5 sec

R_JA

100

166

Maximum Junction to Ambient ¹

°C / W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-Dec-2010 Rev. B

Page 1 of 2

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