SMG2342NE
5.2 A, 40 V, RDS(ON) 86 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on) and
to ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.45
0.85
0.20
0.55
1.15
K
PACKAGE INFORMATION
E
F
1.70
0.35
2.30
0.50
L
Package
MPQ
3K
LeaderSize
SC-59
7’ inch
ESD
Protection
Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
±20
5.2
4.1
30
V
VGS
V
TA=25°C
TA=70°C
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
A
A
1.6
1.3
0.8
TA=25°C
Power Dissipation 1
TA=70°C
Operating Junction and Storage Temperature Range
PD
W
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Data
t≦5 sec
100
166
Maximum Junction to Ambient 1
RθJA
°C/W
Steady-State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
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