Datasheet > SMG2334NE

SMG2334NE

更新时间： 2024-10-01 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	320K
描述
N-Channel Enhancement MOSFET

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SMG2334NE 数据手册

SMG2334NE

3.5 A, 30 V, R_DS(ON)60 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SC-59

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process

to provide low R_DS(on)and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in

portable and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.

Low thermal impedance copper leadframe SC-59 saves board

space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

PRODUCT SUMMARY



Drain

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

V_DS(V)

R_DS(on) (

60@V_GS= 4.5V

82@V_GS= 2.5V

I_D(A)

3.5

3.0



Gate

ESD

Protection

Diode



Source

2KV

ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T_A= 25°C unless otherwise specified)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

RATING

UNIT

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

3.5

Continuous Drain Current ^A

I_D

2.8

Pulsed Drain Current ^B

Continuous Source Current (Diode Conduction) ^A

I_DM

I_S

1.25

1.3

T_A=25°C

T_A=70°C

Power Dissipation ^A

P_D

0.8

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

°C

THERMAL RESISTANCE DATA

t≦10 sec

R_θJA

100

166

Maximum Junction to Ambient ^A

°C/W

Steady-State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Jul-2010 Rev. A

Page 1 of 4

12 3 4

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