Datasheet > SMG2329S

SMG2329S

更新时间： 2024-10-02 01:17:43

品牌	Logo	应用领域
SECOS		/
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描述
P-Channel Enhancement Mode MOSFET

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数据手册

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SMG2329S 数据手册

SMG2329S

-1.2A , -100V , R_DS(ON)650 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

The SMG2329S provide the designer with best combination

of fast switching, low on-resistance and cost-effectiveness.

The SMG5409 is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

2329S

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

-100

±20

-1.2

-1

V_GS

T_A=25°C

T_A=70°C

Continuous Drain Current, V_GS=10V ¹

I_D

Pulsed Drain Current ²

Power Dissipation ³

I_DM

P _D

-5

°C

T_A=25°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ³

Maximum Junction to Case ¹

R_θ

125

°C / W

R_θ

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Jul-2013 Rev. A

Page 1 of 4

12 3 4

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