Datasheet > SMG2334N

SMG2334N

更新时间： 2024-10-02 01:17:43

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N-Channel Enhancement MOSFET

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SMG2334N 数据手册

SMG2334N

3.5A, 30V, R_DS(ON)60m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low R_DS(on)and

to ensure minimal power loss and heat dissipation.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and

extends battery life.



Low thermal impedance copper leadframe

SC-59 saves board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

0.55

1.15

APPLICATION

0.45

0.85

1.70

0.35

2.30

0.50

DC-DC converters and power management in

portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and

cordless telephones.



Drain



Gate

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch



Source

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

T_A=25°C

T_A=70°C

3.5

Continuous Drain Current ¹

I_D

2.8

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

1.25

1.3

Power Dissipation ¹

P_D

0.8

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦10 sec

R_θJA

Steady-State

100

166

Maximum Junction to Ambient ¹

Notes:

°C/W

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

16-Mar-2011 Rev. A

Page 1 of 4

12 3 4

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