SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize
A
high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
D
Low RDS(on) provides higher efficiency and extends
battery life.
H
J
G
Miniature SC-59 surface mount package saves
board space.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Fast switching speed.
High performance trench technology.
Low gate charge 7.2Nc.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.20
K
0.45
0.55
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
APPLICATION
DC-DC converters, power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
±8
V
V
TA=25°C
TA=70°C
-4.1
Continuous Drain Current 1
ID
A
-3.3
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
±10
A
A
±0.46
1.25
0.8
TA=25°C
TA=70°C
Power Dissipation 1
PD
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
t≦5 sec
RθJA
100
150
Maximum Junction to Ambient 1
Notes:
°C/W
Steady-State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
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