Datasheet > SMG2322N

SMG2322N

更新时间： 2024-10-01 12:20:19

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N-Channel Enhancement MOSFET

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SMG2322N 数据手册

SMG2322N

2.5A, 30V, R_DS(ON)85 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low R_DS(on)

and to ensure minimal power loss and heat dissipation.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe SC-59

saves board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

APPLICATION

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

2.5

T_A=25°C

T_A=70°C

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

0.46

1.25

0.8

Power Dissipation ¹

P_D

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

t≦5 sec

R_θJA

150

200

Maximum Junction to Ambient ¹

°C/W

Steady-State

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Apr-2011 Rev. B

Page 1 of 4

12 3 4

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