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SMG2307PE_15 PDF预览

SMG2307PE_15

更新时间: 2024-02-04 08:51:54
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 473K
描述
P-Channel Elektronische Bauelemente Enhancement MOSFET

SMG2307PE_15 数据手册

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SMG2307PE  
-5.2 A, -20 V, RDS(ON) 31 m  
P-Channel Enhancement MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SC-59  
These miniature surface mount MOSFETs utilize a high  
A
cell density trench process to provide low RDS(on) and to  
ensure minimal power loss and heat dissipation. Typical  
applications are DC-DC converters and power management  
in portable and battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless telephones.  
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
D
FEATURES  
H
J
G
Low RDS(on) provides higher efficiency and extends  
battery life.  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
0.10 REF.  
0.40 REF.  
Max.  
A
B
C
D
2.70  
2.25  
1.30  
1.00  
3.10  
3.00  
1.70  
1.40  
G
H
J
Low thermal impedance copper leadframe SC-59  
saves board space.  
0.10  
0.45  
0.20  
0.55  
K
Fast switching speed.  
High performance trench technology.  
E
F
1.70  
0.35  
2.30  
0.50  
L
0.85  
1.15  
PACKAGE INFORMATION  
Package  
MPQ  
3K  
Leader Size  
SC-59  
7’ inch  
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter Symbol  
Rating  
-20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
V
±10  
TA=25°C  
TA=70°C  
-5.2  
Continuous Drain Current 1  
Pulsed Drain Current 2  
ID  
A
-4.3  
IDM  
IS  
-20  
A
A
Continuous Source Current (Diode Conduction) 1  
TA=25°C  
TA=70°C  
Operating Junction and Storage Temperature Range  
-1.9  
1.3  
Power Dissipation 1  
PD  
W
°C  
0.8  
TJ, TSTG  
-55 ~ 150  
Thermal Resistance Data  
t 10 sec  
RθJA  
Steady-State  
100  
166  
Maximum Junction to Ambient 1  
°C/W  
Notes:  
1. Surface Mounted on 1” x 1” FR4 Board.  
2. Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-Oct-2012 Rev. A  
Page 1 of 4  

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