SMG2318N
1.2 A, 30 V, RDS(ON) 160 mΩ
N-Channel Logic Level MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
1
FEATURES
1
2
2
ꢀ
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
K
F
E
D
ꢀ
H
J
G
ꢀ
ꢀ
Fast switching speed.
Low Gate Charge
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
APPLICATION
0.10
0.45
0.85
0.20
0.55
1.15
DC-DC converters and power management
in portable and battery-powered products such as computers,
printer , PCMCIA cards, cellular and cordless telephones.
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
1
Package
MPQ
Leader Size
SC-59
3K
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
1.2
V
TA=25°C
TA=70°C
Continuous Drain Current 1
Pulsed Drain Current 2
ID
A
1
IDM
IS
10
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
1.3
1.3
Power Dissipation 1
PD
W
°C
0.8
TJ, TSTG
-55~150
Thermal Resistance Rating
t≦5 sec RθJA
Maximum Junction to Ambient 1
250
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 1 of 4