Datasheet > SMG2319P

SMG2319P

更新时间： 2024-10-01 09:19:07

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描述
P-Channel Enhancement MOSFET

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SMG2319P 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

SMG2319P 数据手册

SMG2319P

-2.1A , -30V , R_DS(ON)200 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SC-59

The miniature surface mount MOSFETs utilize

high cell density process. Low R_DS(on)assures minimal

power loss and conserves energy, making this

device ideal for use in power management circuitry.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.

Fast Switch.



Low Gate Charge.

Miniature SC-59 Surface Mount Package Saves

Board Space.

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

APPLICATION

Voltage control small signal switch, power management

in portable and battery-powered products such as computer

portable electronics and other battery power application.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7’ inch

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

±20

T_A=25°C

T_A=70°C

-2.1

Continuous Drain Current ¹

I_D

-1.7

Pulsed Drain Current ²

I_DM

I_S

±10

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

-0.4

1.25

0.8

Power Dissipation ¹

P_D

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Data

t≦5 sec

R_θJA

250

285

Maximum Junction to Ambient ¹

°C/W

Steady-State

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Apr-2011 Rev. B

Page 1 of 5

12 3 4 5

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