Datasheet > SMG2309

SMG2309

更新时间： 2024-09-29 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	274K
描述
P-Channel Enhancement Mode Power Mos.FET

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数据手册

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SMG2309 数据手册

SMG2309

-3.7A, -30V,RDS(ON) 75m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG2309 provide the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

The SMG2309 is universally preferred for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

Features

* Simple drive requirement

* Small package outline

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 2309

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-30

±20

-3.7

-3.0

-12

Gate-Source Voltage

VGS

Continuous Drain Current ³

Pulsed Drain Current

ID@TA=25 C

ID@TA=70

IDM

PD@TA=25

Total Power Dissipation

1.38

0.01

W/ C

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient³

C /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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