Datasheet > SMG2313

SMG2313

更新时间： 2024-10-01 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	510K
描述
P-Channel Enhancement Mode Power Mos.FET

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SMG2313 数据手册

SMG2313

-2.5A, -20V,RDS(ON) 160m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG2313 provide the designer with the best

combination of fast switching,low on-resistance and

Top View

cost-effectiveness. The SMG231 is universally

preferred for all commercial-industrial surface

mount applications and suited for low voltage

application such as DC/DC conerters.

Features

Drain

* Small Package Outline

Gate

All Dimension in mm

* Simple Drive Requirement

Source

Marking: 2313

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

f12

-2.5

-1.97

Continuous Drain Current³

Pulsed Drain Current¹

I_D@TA=25к

I_D@TA=70к

I_DM

P_D@TA=25к

Power Dissipation

1.38

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.01

-55 ~ +150

W/ć

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

Any changing of specification will not be informed individual

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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