SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a High
Cell Density process. Low RDS(on) assures minimal power loss
and conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends
battery life.
Low Gate Charge
Fast switch.
Miniature SC-59 surface mount package saves
board space.
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
0.10
0.45
0.85
0.20
0.55
1.15
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
1
2
SC-59
7’ inch
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±20
V
V
ID @ TA=25°C
ID @ TA=70°C
-0.9
-0.75
-10
0.4
0.5
A
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
IDM
IS
A
A
PD @ TA=25°C
PD @ TA=70°C
W
W
°C
PD
0.42
-55 ~ 150
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Data
t ≦ 5 sec
250
285
Maximum Junction to Ambient 1
Notes:
RJA
°C / W
Steady State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 1 of 5