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SMG2317P PDF预览

SMG2317P

更新时间: 2024-10-01 09:19:07
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
5页 782K
描述
P-Channel Enhancement Mode MOSFET

SMG2317P 数据手册

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SMG2317P  
-0.9 A, -30 V, RDS(ON) 300 m  
P-Channel Enhancement Mode MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead-free  
DESCRIPTION  
SC-59  
These miniature surface mount MOSFETs utilize a High  
Cell Density process. Low RDS(on) assures minimal power loss  
and conserves energy, making this device ideal for use in power  
management circuitry. Typical applications are lower voltage  
application, power management in portable and battery-powered  
products such as computers, printers, PCMCIA cards, cellular  
and cordless telephones.  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
D
FEATURES  
H
J
G
Low RDS(on) provides higher efficiency and extends  
battery life.  
Low Gate Charge  
Fast switch.  
Miniature SC-59 surface mount package saves  
board space.  
Millimeter  
Millimeter  
Min. Max.  
0.10 REF.  
0.40 REF.  
REF.  
REF.  
Min.  
Max.  
3.10  
3.00  
1.70  
1.40  
A
B
C
D
2.70  
2.25  
1.30  
1.00  
G
H
J
0.10  
0.45  
0.85  
0.20  
0.55  
1.15  
K
E
F
1.70  
0.35  
2.30  
0.50  
L
PACKAGE INFORMATION  
Package  
MPQ  
3K  
LeaderSize  
1
2
SC-59  
7’ inch  
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-30  
±20  
V
V
ID @ TA=25°C  
ID @ TA=70°C  
-0.9  
-0.75  
-10  
0.4  
0.5  
A
Continuous Drain Current 1  
ID  
A
Pulsed Drain Current 2  
Continuous Source Current (Diode Conduction) 1  
Power Dissipation 1  
IDM  
IS  
A
A
PD @ TA=25°C  
PD @ TA=70°C  
W
W
°C  
PD  
0.42  
-55 ~ 150  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
Thermal Resistance Data  
t 5 sec  
250  
285  
Maximum Junction to Ambient 1  
Notes:  
RJA  
°C / W  
Steady State  
1
2
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
05-Jan-2011 Rev. A  
Page 1 of 5  

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