Datasheet > SMG2310

SMG2310

更新时间： 2024-01-17 19:48:37

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	253K
描述
N-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG2310 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.67	Base Number Matches：	1

SMG2310 数据手册

SMG2310

3A, 60V,RDS(ON) 90m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG2310 utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

The SC-59 package is universally used for all

commercial-industrial applications

Features

* Simple drive requirement

* Small package outline

Drain

Gate

All Dimension in mm

Applications

Source

* Power management in Notebook Computer

* Portable equipment

* Battery powered system

Marking : 2310

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±20

3.0

2.3

Gate-Source Voltage

VGS

ID@TA=25^oC

Continuous Drain Current, VGS@4.5V

^oC

Continuous Drain Current, VGS@4.5V

ID@TA=70

Pulsed Drain Current^1,2

IDM

Total Power Dissipation

PD@TA=25^o

1.38

0.01

W/^oC

Linear Derating Factor

^oC

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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