Datasheet > SMG2306

SMG2306

更新时间： 2024-01-07 04:59:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	442K
描述
N-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG2306 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SMG2306 数据手册

SMG2306

5.3A, 20V,RDS(ON) 32m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG2306 utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

The SOT-23 package is universally used for all

commercial-industrial applications

Features

* Capable of 2.5V gate drive

* Lower on-resistance

* Reliable and Rugged

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 2306

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±12

5.3

4.3

Gate-Source Voltage

VGS

ID@TA=25^o

Continuous Drain Current, VGS@4.5V

Continuous Drain Current³, VGS@4.5V

ID@TA=70 C

Pulsed Drain Current

IDM

^oC

Total Power Dissipation

PD@TA=25

1.38

0.01

W/ ^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Thermal Resistance Junction-ambient³

Symbol

Ratings

Unit

C /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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