Datasheet > SMG2307

SMG2307

更新时间： 2024-02-12 16:39:25

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	511K
描述
P-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG2307 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

SMG2307 数据手册

SMG2307

-4.0A, -16V,RDS(ON) 60m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Description

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG2307 is universally preferred for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

Top View

Features

* Super high dense cell design for extremely low RDS(ON)

* Reliable and rugged

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 2307

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-16

±8

Sate-Source Voltage

VGS

Continuous Drain Current³

Continuous Drain Current ³

Pulsed Drain Current

ID@TA=25^o

-4.0

-3.3

-12

ID@TA=70 ^o

IDM

Total Power Dissipation

PD@TA=25 ^o

1.38

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient³

C /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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