Datasheet > SMG2306N

SMG2306N

更新时间： 2024-09-29 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	560K
描述
N-Channel Enhancement Mode Mos.FET

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SMG2306N 数据手册

SMG2306N

3.5A , 30V , R_DS(ON)58 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize

High Cell Density process. Low R_DS(on)assures minimal

power loss and conserves energy, making this device

ideal for use in power management circuitry.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and

extends battery life.



Low gate charge

Fast switching

Miniature SC-59 surface mount package

saves board space.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

0.10

0.45

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

APPLICATION

0.20

0.55

PWMDC-DC converters, power management

1.70

0.35

2.30

0.50

0.85

1.15

in portable and battery-powered products such as

computers, printers, battery charger, telecommunication

power system, and telephones power system.

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

3.5

I_D@ T_A=25°C

I_D@ T_A=70°C

Continuous Drain Current ¹

I_D

2.8

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

1.25

1.3

P_D@ T_A=25°C

P_D@ T_A=70°C

°C

P_D

0.8

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

Thermal Resistance Rating

t ≦ 10 sec

100

166

Maximum Junction to Ambient ¹

Notes:

R_JA

°C / W

Steady State

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Apr-2011 Rev. B

Page 1 of 4

12 3 4

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