Datasheet > SMG2306A

SMG2306A

更新时间： 2024-02-29 12:17:05

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	1027K
描述
N-Channel Enhancement Mode Power Mos.FET

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SMG2306A 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SMG2306A 数据手册

SMG2306A

5 A, 30 V, R_DS(ON)35 mΩ

N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial

applications.

FEATURES

Capable of 2.5V gate drive

Lower on-resistance

PACKAGE DIMENSIONS

Drain

Top View

Gate

Source

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0°

D (Typ.)

1.15

10°

0.45

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±12

Drain Current³,VGS@4.5V

Pulsed Drain Current^1,

Power Dissipation

I_D@Ta=25℃

I_D@Ta=70℃

I_DM

P_D@Ta=25℃

Tj, Tstg

1.38

℃

W/℃

Operating Junction and Storage Temperature Range

Linear Derating Factor

-55 ~ +150

0.01

THERMAL DATA

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

℃/W

01-June-2005 Rev. B

Page 1 of 4

12 3 4

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