Datasheet > SMBT882SS

SMBT882SS

更新时间： 2024-09-16 09:20:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	477K
描述
NPN Silicon Epitaxial Planar Transistor

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技术参数
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SMBT882SS 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SMBT882SS 数据手册

SMBT882SS

NPN Silicon

Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and

voltage regulator.

FEATURES

High current output up to 3A

Low saturation voltage

PACKAGE DIMENSIONS

SC-59

Dim

Min

2.70

1.30

1.00

0.35

Max

3.10

1.70

1.30

0.50

Top View

1.90 REF.

0.00

0.10

0.20

1.25

2.25

0.10

0.26

0.60

1.65

3.00

COLLECTOR

BASE

All Dimension in mm

EMITTER

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

5.0

3.0

750

Total Power Dissipation

Junction, Storage Temperature

℃

T_J, T_STG

+150, -55 ~ +150

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

I_C=100uA, I_E= 0

I_C=1mA, I_B=0

BVCEO

BVEBO

ICBO

5.0

I_E=10uA, I_C=0

1.0

0.5

2.0

μA

V_CB=30V, I_E= 0

V_EB=3V, I_C= 0

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

I_C=2A, I_B=200mA

V_CE=2V, I_C=20mA

V_CE=2V, I_C=1 A

100

500

MHz

V_CE=5V, I_C=100mA, f=100MHz

V_CB=10V, f=1MHz

Cob

* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%

CLASSIFICATION OF h_FE2

Rank

Range

100 - 200

160 - 320

200 - 500

01-June-2002 Rev. A

Page 1 of 3

12 3

中文翻译

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