Datasheet > SMBTA06_07

SMBTA06_07

更新时间： 2024-11-18 09:20:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	77K
描述
NPN Silicon AF Transistor Low collector-emitter saturation voltage

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数据手册

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SMBTA06_07 数据手册

SMBTA06/MMBTA06

NPN Silicon AF Transistor

• Low collector-emitter saturation voltage

• Complementary type:

SMBTA 56 / MMBTA56 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SMBTA06/MMBTA06

s1G

SOT23

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

500

Peak collector current

Base current

100

200

330

Peak base current

Total power dissipation-

°C

tot

T ≤ 79 °C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 215

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-19

12 3 4 5 6 7

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