Datasheet > SMBTA06UPN_07

SMBTA06UPN_07

更新时间： 2024-11-18 06:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	79K
描述
NPN / PNP Silicon AF Transistor Array High breakdown voltage

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中文翻译

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SMBTA06UPN_07 数据手册

SIGC07T60SNC

IGBT Chip in NPT-technology

FEATURES:

600V NPT technology

100µm chip

short circuit prove

positive temperature coefficient

easy paralleling

This chip is used for:

DuoPack SKP06N60

Applications:

drives

Chip Type

V_CE

I_Cn

Die Size

2.6 x 2.6 mm²

Package

sawn on foil

unsawn

Ordering Code

Q67041-A4672-

A003

Q67041-A4672-

A002

SIGC07T60SNC

600V

MECHANICAL PARAMETER:

mm²

Raster size

2.6 x 2.6

6.76 / 4.3

1.107 x 1.78

0.5 x 0.7

100

Area total / active

Emitter pad size

Gate pad size

Thickness

µm

deg

Wafer size

150

Flat position

0 //180

Max.possible chips per wafer

Passivation frontside

Emitter metallization

2249

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7212-S, Edition 2, 28.11.2003

12 3 4

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